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Publications

"Variability and technology aware SRAM Product yield maximization"
P. Zuber, M. Miranda, et al. "Variability and technology aware SRAM Product yield maximization". Intl. Symp. on VLSI Technology, Kyoto, Japan, June 2011, pp. 222-223. ISBN 978-1-4244-9949-6 (IEEE Xplore)
“Device Variability Analysis in Carbon Nanotube Technology”
García, C., Rubio, A., “Device Variability Analysis in Carbon Nanotube Technology”, 2nd European Workshop on Variability, Grenoble, May 2011
“DEVICE TO PRODUCT LEVEL ASSESSMENT OF PROCESS VARIABILITY”
Miguel Miranda. “DEVICE TO PRODUCT LEVEL ASSESSMENT OF PROCESS VARIABILITY”, Invited - 2nd European Workshop on Variability, Grenoble, May 2011
“TRAMS : Terascale reliable adaptive memory systems”
Canal, R.; Rubio, A.; Asenov, A.; Brown, A.; Miranda Corbalan, M.; Zuber, P.; Dobrovolny, P.; Gonzales, A. and Vera, X., (TRAMS) “TRAMS : Terascale reliable adaptive memory systems”, FET'11, The European Future Technologies Conference and Exhibition, Budapest, Hungary, May 2011, also SciVerse ScienceDirect, Procedia Computer Science 7 (2011) 148-149. DOI: 10.1016/j.procs.2011.09.010
“Statistical Analysis of 6T SRAM Data Retention Voltage under Process Variation”
Vatajelu, E., Figueras, J., “Statistical Analysis of 6T SRAM Data Retention Voltage under Process Variation”, 14th IEEE Design and Diagnostics of Electronic Circuits and Systems, pp. 365-370, 13-15 April 2011, Cottbus, Germany. DOI: 10.1109/DDECS.2011.5783112
"Invited talk at HiPEAC Computing SystemsWeek, Task Force on Reliability and Availability"
Invited talk at HiPEAC Computing SystemsWeek, Task Force on Reliability and Availability Chamonix, France , April 2011
"Manufacturing Variability Analysis in Carbon Nanotube Technology: comparison with bulk CMOS in 6T SRAM scenario"
C. Garcia and A. Rubio, "Manufacturing Variability Analysis in Carbon Nanotube Technology: comparison with bulk CMOS in 6T SRAM scenario", 14th IEEE Symposium on Design and Diagnosis of Electronic Circuits and Systems, pp. 249-254, Germany, April 13rd-14th 2011. DOI: 10.1109/DDECS.2011.5783088
“Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions”
S. Markov, X. Wang, N. Moezi and A. Asenov, “Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions”. IEEE Transactions on Electron Devices, vol.58, nº8, pp.2385-2393, 2011. DOI: 10.1109/TED.2011.2152845
“Variability aware modelling for yield enhancement of SRAM and logic"
Miranda Corbalan, M.; Zuber, P.; Dobrovolny, P. and Roussel, P., “Variability aware modelling for yield enhancement of SRAM and logic", IEEE Design Automation and Test In Europe Conference – DATE, Grenoble, France, March 2011, pp. 1153-1158. DOI: 10.1109/DATE.2011.5763193
“Statistical aspects of NBTI/PBTI and impact on SRAM yield”
A. Asenov, A. R. Brown and B. Cheng, “Statistical aspects of NBTI/PBTI and impact on SRAM yield”, IEEE Design, Automation and Test in Europe (DATE), Grenoble, France, March 2011. DOI: 10.1109/DATE.2011.5763240
“A new probabilistic design methodology of nanoscale digital circuits”
“A new probabilistic design methodology of nanoscale digital circuits”. 21st Int. Conference on Communications and Computers (CONIELECOMP), March 2011, pp. 190-193.
"Runtime Monitoring of Power/Performance of Caches under Variability using Embedded 3T1D Cells”
Shrikanth Ganapathy, Ramon Canal, Antonio González, Antonio Rubio, “Runtime Monitoring of Power/Performance of Caches under Variability using Embedded 3T1D Cells”. 2011 ACM/EDAC/IEEE Design and Automation Conference.
"Robustness Analysis of 6T SRAMs in Memory Retention Mode under PVT Variations"
E I Vatajelu and J Figueras, "Robustness Analysis of 6T SRAMs in Memory Retention Mode under PVT Variations," in Design, Automation & Test in Europe Conference & Exhibition (DATE), 2011 , pp.1-6, 14-18 March 2011. DOI: 10.1109/DATE.2011.5763159
“Analysis of the mismatch of digital circuits by common environment fluctuations”
D. Andrade, A. Rubio, et al.“Analysis of the mismatch of digital circuits by common environment fluctuations”, Proc. IEEE Int. Symp. Circuits and Systems, ISCAS, 15-18th May, Rio de Janeiro, 2011, pp. 2585-2588. DOI: 10.1109/ISCAS.2011.5938133
"New reliability mechanisms in memory design for sub-22nm technologies”
N. Aymerich, A. Asenov, A. Brown, R. Canal, B. Cheng, J. Figueras, A. Gonzalez, E. Herrero, S. Markov, M. Miranda, P. Pouyan, T. Ramirez, A. Rubio, I. Vatajelu, X. Vera, X. Wang, P. Zuber; "New reliability mechanisms in memory design for sub-22nm technologies”, (invited paper) 17th IEEE On-Line Testing Symposium (IOLTS'11), Athens (Greece), July 2011. DOI: 10.1109/IOLTS.2011.5993820
“Unidirectional error detection, localization and correction for DRAMs: Application to on-line DRAM repair strategies”
Madalin, N., Miclea, L, Figueras, J., “Unidirectional error detection, localization and correction for DRAMs: Application to on-line DRAM repair strategies”, 17th Int. Symp. On line testinh (IOLTS), 2011 IEEE, pp. 264-269.
“Fault Tolerant Nanoscale Architecture based on Linear Threshold gates, with redundancy”
Aymerich, N., Rubio, A., “Fault Tolerant Nanoscale Architecture based on Linear Threshold gates, with redundancy”. Proc. Design of Electronic Circuits and Systems, October 2010.
"Robustness of SRAM to Power Supply Noise during Leakage Power Saving in DVS"
E. I. Vatajelu, M. Renovell, J. Figueras, "Robustness of SRAM to Power Supply Noise during Leakage Power Saving in DVS". Workshop on LPonTR, 2010
“Design of Boolean functions and memory units based on Resistive Switching devices”
García, C., Moll, F., Rubio., “Design of Boolean functions and memory units based on Resistive Switching devices”, Proc. Design of Electronic Circuits and Systems, October 2010.
“Impact of metal gate granularity on the statistical variability in scaled decananometre bulk MOSFETs: A full-scale 3D simulation study”
X. Wang, “Impact of metal gate granularity on the statistical variability in scaled decananometre bulk MOSFETs: A full-scale 3D simulation study”. et al. IEEE Trans. Electron Devices, submitted.