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E. Amat, et al., “Variability mitigation mechanisms in scaled 3T1D-DRAM memories in 22nm and beyond”, IEEE Transactions on Devices and Materials Reliability, (accepted) 2013. DOI: 10.1109/TDMR.2012.2217497
Located in Publications
E. Amat et al., “Impact of FinFET technology introduction in the 3T1D-DRAM memory cell”, submitted to IEEE Transactions on Devices and Materials Reliability. DOI: 10.1109/TDMR.2013.2238542
Located in Publications
Z. Jaksic, R. Canal, “Comparison of SRAM cells for 10nm SOI FinFETs under process and environmental variations”, IEEE Transactions on Electron Devices, vol.6, no.1, pp. 49-55, January 2013. DOI: 10.1109/TED.2012.2226095
Located in Publications
N. Aymerich, S. Cotofana, A. Rubio, “Controlled degradation stochastic resonance in adaptive averaging cell based architectures”, IEEE Transactions on Nanotechnology (invited, accepted), 2013.
Located in Publications
"Manufacturing Variability Analysis in Carbon Nanotube Technology: comparison with bulk CMOS in 6T SRAM scenario"
C. Garcia and A. Rubio, "Manufacturing Variability Analysis in Carbon Nanotube Technology: comparison with bulk CMOS in 6T SRAM scenario", 14th IEEE Symposium on Design and Diagnosis of Electronic Circuits and Systems, pp. 249-254, Germany, April 13rd-14th 2011. DOI: 10.1109/DDECS.2011.5783088
Located in Publications
“A holistic approach for statistical analysis of SRAM”
Zuber, P.; Dobrovolny, P. and Miranda Corbalan, M., “A holistic approach for statistical analysis of SRAM”. Proceedings of the 47th ACM/IEEE Design Automation Conference ‐ DAC. 13‐18 July 2010; Anaheim, CA, USA, pp.717-724. ISBN: 978-1-4244-6677-1 (IEEE Xplore)
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Final Report
Final Report
Located in Public deliverables
Publishable summary (Y3)
Publishable summary (Y3)
Located in Public deliverables
D6.5 Gender aspects report (Y3)
D6.5 Gender aspects report
Located in Public deliverables
D6.4 Final consolidated report (Y3)
D6.4 Final consolidated report
Located in Public deliverables